CMPDM8120 surface mount p-channel enhancement-mode silicon mosfet description: the central semiconductor CMPDM8120 is an enhancement-mode p-channel field effect transistor, manufactured by the p-channel dmos process, designed for high speed pulsed amplifier and driver applications. this mosfet offers low r ds(on) and low threshold voltage. marking code: c8120 maximum ratings: (t a =25c) symbol units drain-source voltage v ds 20 v gate-source voltage v gs 8.0 v continuous drain current (steady state) i d 860 ma continuous drain current, t 5.0s i d 950 ma continuous source current (body diode) i s 360 ma maximum pulsed drain current, tp=10s i dm 4.0 a maximum pulsed source current, tp=10s i sm 4.0 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =8.0v, v ds =0 1.0 50 na i dss v ds =20v, v gs =0 5.0 500 na bv dss v gs =0, i d =250a 20 24 v v gs(th) v ds =v gs , i d =250a 0.45 0.76 1.0 v v sd v gs =0, i s =360ma 0.9 v r ds(on) v gs =4.5v, i d =0.95a 85 150 m r ds(on) v gs =4.5v, i d =0.77a 85 142 m r ds(on) v gs =2.5v, i d =0.67a 130 200 m r ds(on) v gs =1.8v, i d =0.2a 190 240 m g fs v ds =10v, i d =810ma 2.0 s c rss v ds =16v, v gs =0, f=1.0mhz 80 pf c iss v ds =16v, v gs =0, f=1.0mhz 200 pf c oss v ds =16v, v gs =0, f=1.0mhz 60 pf t on v dd =10v, v gs =4.5v, i d =950ma, r g =6 20 ns t off v dd =10v, v gs =4.5v, i d =950ma, r g =6 25 ns features: ? low r ds(on) ? low threshold voltage ? logic level compatibility ? small sot-23 package applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment sot-23 case r1 (27-january 2010) www.centralsemi.com
CMPDM8120 surface mount p-channel enhancement-mode silicon mosfet lead code: 1) gate 2) source 3) drain marking code: c8120 sot-23 case - mechanical outline www.centralsemi.com r1 (27-january 2010)
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